Trabalhos periódicos (Completos)
2010
MARTINI, S.; MANZOLI, J. E.; QUIVY, A. A. . Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures Processing, Measurement and Phenomena, v. 28, p. 277, 2010.
2009
PARRA, F. T. ; SANTOS FILHO, S. G. ; MARQUES, A. E. B. ; MARTINI, S. Characterization of Cu/Cu0,4Ni0,4P0.2 Thermocouples Fabricated on Silicon Surfaces Using Electroless Deposition.ECS transactions, v. 23, p. 165-171, 2009.
2008
50. MARTINI, S.; LUCCHI, J. C.; MARQUES, A.E.B.; TELES, L.T. Spintrônica – Parte I: uma introdução. Revista Integração: ensino, pesquisa e extensão, v. 53, p. 171-174, 2008.
2007
49. CASAGRANDE, D. A estrutura eletrônica de moléculas, sólidos e superfícies. Revista Integração – ensino, pesquisa e extensão, v. 51, p. 363-369, 2007.
48. ALEIXO, L.A.G.; TOSHI-ICHI, T.; CASAGRANDE, D. Poluição por óleo: formas de introdução de petróleo e derivados. Revista Integração – ensino, pesquisa e extensão, v. 49, p.159-166, 2007.
47. MARQUES, Angelo Eduardo Battistini ; SANTOS FILHO, S. G. ; MARTINI, S. Electroless nickel deposition onto silicon surfaces for micro and nanoeletronics applications and microtechnology process. Physica Status Solidi. C, Conferences and Critical Reviews, v. 4, p. 256-258, 2007.
46. PARRA, F. T. ; SANTOS FILHO, S. G. ; MARQUES, Angelo Eduardo Battistini ; MARTINI, S. . Electroless Deposition of CuNiP Alloys onto Silicon Surfaces. ECS Transactions, v. 9, p. 199-201, 2007.
2005
45. da ROCHA, C. A.; ROBILOTTA, M. R; HIGA, R. Relativistic O(q4) two-pion exchange nucleon-nucleon potential: parametrized version. Brazilian Journal of Physics, Estados Unidos, v. 35, p. 01076, 2005.
44. FERRAZ, G. M.; SOUZA, S. O.; WATANABE, S.; NOGUEIRA, E. O. Termoluminescência e datação de peças arqueológicas. Integração, 2005.
43. FERRAZ, G. M.; MOYA, H. D.; WEYNE, G. R. S. Metodologia para o cálculo do valor de pH em soluções aquosas de ácidos fracos monopróticos. Uma revisão nos livros de graduação. Integração, 2005.
42. FERRAZ, G. M.; TEIXEIRA, M. I.; CALDAS, L. EPR dosimetry using commercial glasses for high gamma doses. Applied Radiation and Isotopes, Inglaterra, v. 62, p. 365-370, 2005.
41. FERRAZ, G. M.; TEIXEIRA, M. I.; CALDAS, L. Influence of thermal treatments on the response of sand radiation detectors for high dose dosimetry. Radiation Protection Dosimetry, 2005.
40. FERRAZ, G. M.; TEIXEIRA, M. I.; CALDAS, L. Sand for high dose dosimetry using the EPR technique. Applied Radiation and Isotopes, Inglaterra, v. 62, p. 359-363, 2005.
39. FERRAZ, G. M.; THOMAZ FILHO F. ; WATANABE, S. EPR and TL studies of phenakite crystal and application to dating. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms, Inglaterra, v. 229, p. 253-260, 2005.
37. MARTINI, S.; QUIVY, A. A.; LAMAS, T. E.; SILVA, E. C. F. da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates. Physical Review B - Condensed Matter and Materials Physics, v. 72, p. 15330-4-1, 2005.
36. PAGNOSSIN, I. R.; SILVA, E. C. F. da; QUIVY, A. A.; MARTINI, S.; SÉRGIO, C. S. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots. Journal of Applied Physics, v. 97, p. 11370, 2005.
35. SILVA, M. J. da; QUIVY, A. A.; MARTINI, S.; LAMAS, T. E.; SILVA, E. C. F. da; LEITE, J.r. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005.
2004
34. da ROCHA, C. A.; ROBILOTTA, M. R; HIGA, R. Relativistic O(q4) two-pion exchange nucleon-nucleon potential: configuration space. Physical Review C - Nuclear Physics, Estados Unidos, v. 69, p. 34009-34025, 2004.
33. FERRAZ, G. M.; SOUZA, S. O.; WATANABE, S. Effects of Mn and Fe impurities on the TL and EPR properties of artificial spodumune policrystals under irradiation. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms, v. 218, p. 259-263, 2004.
2003
32. CAVALHEIRO, A.; SILVA, E. C. F. da; QUIVY, A. A.; TAKAHASHI, E. K.; MARTINI, S.; SILVA, M. J. da; MENESES, E. A.; LEITE, J. R. Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si delta-doped GaAs/In0.15Ga0.85As quantum wells. Journal of Physics Condensed Matter, v. 15, p. 121, 2003.
31. DUARTE, C. A.; SILVA, E. C. F. da; QUIVY, A. A.; SILVA, M. J. da; MARTINI, S.; LEITE, J. R.; MENESES, E. A. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, p. 6279, 2003.
30. LAMAS, T. E.; MARTINI, S.; SILVA, M. J. da; QUIVY, A. A.; LEITE, J.r. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, p. 701, 2003.
29. MARTINI, S.; QUIVY, A. A.; LAMAS, T. E.; SILVA, M. J. da; SILVA, E. C. F. da; LEITE, J.r. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, p. 101, 2003.
28. MARTINI, S.; QUIVY, A. A.; LAMAS, T. E.; SILVA, M. J. da; SILVA, E. C. F. da; LEITE, J. R.; ABRAMOF, E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, v. 94, p. 7050, 2003.
27. SILVA, M. J. da; MARTINI, S.; LAMAS, T. E.; QUIVY, A. A.; SILVA, E. C. F. da; LEITE, J. R. Low-growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3micro-m. Microelectronics Journal, v. 34, p. 631, 2003.
26. SILVA, M. J. da; QUIVY, A. A.; MARTINI, S.; LAMAS, T. E.; SILVA, E. C. F. da; LEITE, J. R. Optical response at 1.3 micro-m and 1.5 micro-m with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, v. 251, p. 181, 2003.
25. SILVA, M. J. da; QUIVY, A. A.; MARTINI, S.; LAMAS, T. E.; SILVA, E. C. F. da; LEITE, J.r. InAs/GaAs quantum dots optically active at 1.5 micro-m. Applied Physics Letters, v. 82, p. 2646, 2003.
24. da ROCHA, C. A.; MAEKAWA, C. M. Scalar-Isoscalar mesons in pion production at threshold. Physics Letters B, Holanda, v. 99, p. 05052, 2003.
2002
23. FERRAZ, G. M.; WATANABE, S.; SOUZA, S. O.; SCALVI, R. M. F. TL, EPR and Optical Absorption studies on natural Alexandrite compared to natural Chrysoberyl. Radiation Protection Dosimetry, Inglaterra, v. 100, n. 1-4, p. 471-474, 2002.
22. MARTINI, S.; QUIVY, A. A. In-situ determination of indium segregation in InGaAs/GaAs quantum well grown by molecular beam epitaxy. Brazilian Journal of Physics, Brasil, v. 32, n. 2A, p. 359, 2002.
21. MARTINI, S.; QUIVY, A. A.; SILVA, E. C. F. da; LEITE, J. R. Real-time determination of the segregation strength of indium atoms in InGaAs layres grown by molecular beam epitaxy. Applied Physics Letters, Estados Unidos, v. 81, p. 2863, 2002.
20. SALES, F. V. de; SOLER, M. G. A.; UGARTE, D.; ABRAMOF, E.; QUIVY, A. A.; SILVA, S. W. da; MARTINI, S.; MORAIS, P. C. Investigation of optical and structural properties of InxGa1-xAs/GaAs quantum wells grown on vicinal GaAs(001) substrates. Physica B - Condensed Matter, v. 311, p. 285, 2002.
2001
19. FERRAZ, G. M.; MATSUOKA, M.; WATANABE, S.; SUNTA, C. M.; ACHARYALU, G. V. S. G.; SRIKANTAIAH, R. V. Thermoluminescence and Optical Absorption of BaF2 crystals. Radiation Effects and Defects in Solids, v. 154, n. 3-4, p. 325-331, 2001.
18. FERRAZ, G. M.; WATANABE, S.; SOUZA, S. O.; SCALVI, R. M. F. Thermoluminescence and Paramagnetic Resonance properties of natural alexandrite. SBPN. Sociedade Brasileira de Pesquisadores Nikkeis, São Paulo, v. 5, p. 164-165, 2001.
17. MARQUES, A. E. B. PHYSICAL AND ELECTRICAL CHARACTERIZATIO OF THIN NICKEL FILMS OBTANED FROM ELECTROLESS PLATING ONTO ALUMINUM. Physica Status Solidi (a), 187, no. 1; pp. 75-84, 2001., v. 187, n. 1, p. 75-84, 2001.
16. MARTINI, S.; QUIVY, A. A.; TABATA, A.; LEITE, J. R. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum well grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, p. 2280, 2001.
15. MARTINI, S.; QUIVY, A. A.; UGARTE, D.; LANGE, C.; RICHTER, W.; TOKRANOV, V. E. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, v. 227-8, p. 46, 2001.
14. SALES, F. V. de; SOLER, M. G. A.; UGARTE, D.; QUIVY, A. A.; SILVA, S. W. da; MARTINI, S.; MORAIS, P. C. Step-bunching evidence in strained InxGa1-xAs/GaAs grown on vicinal (001) substrates. Physica Status Solidi A-Applied Research, v. 187, p. 253, 2001.
2000
13. da ROCHA, C. A.; MILLER, G. A.; van KOLCK, U. The N+N >N+N+pi+ reaction near threshold in a chiral power counting approach. Physical Review C - Nuclear Physics, Estados Unidos, v. 61, p. 03461, 2000.
12. MARTINI, S.; QUIVY, A. A.; TABATA, A.; LEITE, J. R. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, v. 18, p. 1991, 2000.
1999
1998
10. BALLOT, J.; ROBILOTTA, M. R.; da ROCHA, C. A. NN Scattering: Chiral Symetry And Asymptotic Observables. Physical Review C - Nuclear Physics, Estados Unidos, v. 57, n. 4, p. 1574-1579, 1998.
9. CASAGRANDE, D.; FERRAZ, A. C.; SRIVASTAVA, G.P. Theoretical calculations for Si(001)-(2x1)Cl. Surface Science, Inglaterra, v. 402, p. 653-657, 1998.
8. FERRAZ, G. M.; MATSUOKA, M.; WATANABE, S.; SUNTA, C. M. Radiation effects on BaF2 crystals. Radiation Effects and Defects in Solids, v. 146, n. 1-4, p. 303-309, 1998.
1997
7. BALLOT, Jean Luc; ROBILOTTA, M. R.; da ROCHA, C. A. Two-Pion Exchange Nuclear Potential - Chiral Cancellations. International Journal Of Modern Physics E-Nuclear Physics, Coréia do Sul, v. 6, n. 2, p. 83-88, 1997.
6. da ROCHA, C. A.; KREIN, Gastão I.; WILETS, Lawrence. Ghost Poles In The Nucleon Propagator In The Linear Sigma-Model Approach And Its Role In Pion-Nucleon Low-Energy Theorems. Nuclear Physics A, Holanda, v. 616, p. 625-647, 1997.
5. da ROCHA, C. A.; ROBILOTTA, M. R. The Two-Pion Exchange Nucleon-Nucleon Potential: Model Independent Features. Nuclear Physics A, Holanda, v. 615, p. 391-416, 1997.
1996
4. CASAGRANDE, D.; FERRAZ, A. C. Stability And Electronic Structure of Superlattices (III-V)n/(IV-IV)n. BRAZILIAN JOURNAL OF PHYSICS, v. 26, n. 01, p. 381-387, 1996.
1995
3. da ROCHA, C. A.; ROBILOTTA, M. R. Chiral Background For The Two-Pion Exchange Nuclear Potential: A Parametrized Version. Physical Review C - Nuclear Physics, Estados Unidos, v. 52, n. 2, p. 531-538, 1995.
1994
2. da ROCHA, C. A.; ROBILOTTA, M. R. Two Pion Exchange Nucleon-Nucleon Potential: The Minimal Chiral Model. Physical Review C - Nuclear Physics, Estados Unidos, v. 49, n. 4, p. 1818-1826, 1994.
1989
1. PEREIRA, D.; RAMIREZ, G.; SALA, O.; CHAMON, L. C.; da ROCHA, C. A.; ACQUADRO, J. C.; TENREIRO, C. Effect Of The Threshold Anomaly On The Fusion Cross Sections For The Systems 16O+63,65Cu. Physics Letters B, Holanda, v. 220, n. 3, p. 347-350, 1989.
Trabalhos em eventos (Completo)
2007
8. MARTINI, S.; QUIVY, A.A.; SILVA, E.C.F. da; MARQUES, A.E.B. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrates. In: 28th International Conference on the Physics of Semiconductors. 2007, Viena. AIP Conference Proceedings. New York: American of Institute of Physics, 2007, v. 893, p. 17-18.
2006
2001
6. MARQUES, A. E. B.; FONTES, M. B. A.; FO, S. G. S. Development of a highly sensitive chemical microsensor. In: ibersensor, 2001, buenos aires. Ibersensor proceedings, 2001.
2000
5. MARQUES, A. E. B.; FO, S. G. S. Electrical characterization of electroless nickel films onto aluminum surfaces. In: XV SBMicro, 2000, Manaus. XV SBMicro, 2000.
4. MARQUES, A. E. B.; FO, S. G. S. Morphological characterization of electroless nickel films onto aluminum surfaces. In: XV SBMicro, 2000, Manaus. XV SBMicro, 2000.
1999
3. MARQUES, A. E. B.; Pd electroless plating onto Si surfaces. In: XIV congresso da SBMicro, 1999, Campinas, 1999.
2. MARQUES, A. E. B.; FO, S. G. S. Ni electroless plating onto Pd- activated surfaces. In: XIV Congresso SBMicro, 1999, Campina, 1999.
1989
1. PEREIRA, D.; SILVA, Cely P; CHAMON, L. C.; da ROCHA, C. A.; BORGES, A M; ROSSI, e S; SALA, O. Experimental Fusion Cross Sections For The Systems With 12C, 16O, And 18O As Projectiles And Targets With Mas Near 60. In: 1989 INTERNATIONAL NUCLEAR PHYSICS CONFERENCE - IUPAP, 1989, São Paulo - SP - Brasil. oPrceedings of the 1989 International Nuclear Physics Conference. Singapura - Coréia do Sul : World Scientific, 1989. p. 0-0.
Livros publicados/organizados ou edições
1995
1. MARQUES, A. E. B. Dispositivos Semicondutores. 5. ed. São Paulo: Editora Érica, 1995. v. 1. 450 p.
Publicações
Unidade Mooca - R. Taquari, 546 - Mooca - São Paulo/SP - CEP 03166-000 | Unidade Butantã - Av. Vital Brasil, 1000 - Butantã - São Paulo/SP - CEP 05503-001
© 2000 / 2012 Universidade São Judas Tadeu